| 1. | Another test method for junction depth
测试结深的另一种方法 |
| 2. | In the second one , we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration
第二部分研究了p - n结及铝背场对太阳电池特性的影响。 |
| 3. | It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established
通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。 |
| 4. | Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance . the formation theory of aluminum - alloyed back surface field , the effect parameters to the doping concentration and the junction depth were analyzed
比较了两种商业太阳电池的杂质浓度分布及结深情况；叙述了铝背场的作用及形成原理，对影响铝背场表面浓度和结深的参数作了分析。 |
| 5. | The sensor operation speed can be 64ms / frame ~ 2ms / frame . in the research of photoelectric cell , device physics structure of pixels have been optimized . deep junction depth photodiodes , such as p + / n - well / p - sub structure , have been used and the photo - response of the sensor has been greatly enhanced
复位信号为sv时的单帧感光动态范围为60db ，采用改变复位信号频率的二次扫描方式可将传感器的总的感光动态范围扩大到84db ，可对0石10 ， 000lx光照强度的信号进行传感。 |
| 6. | From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices
此工艺发明以来，克服了上述两者的弊端，杂质浓度和结深能准确控制而又能任意调整，可进行低、高浓度阶段性掺杂，得到元素ga在si中的理想分布，而且表面浓度均匀一致、重复性好、合格率和优品率高，改善和提高了器件的综合性能。 |
| 7. | In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported , and its typical applications in the hgcdte material and devices processing , especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced
摘要文章介绍了二次离子质谱仪的结构及其基本工作原理，并通过对典型应用的分析，介绍了二次离子质谱分析技术在高灵敏度碲镉汞红外焦平面探测器材料和器件制备工艺中的作用，特别是在结探监测和微量杂质监控方面所发挥的重要作用。 |
| 8. | The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ) . it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent , doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
实验研究了快速热扩散( rtd ) ：通过旋涂磷胶和印刷磷浆两种方式考查了2 4和103 103单晶硅的快速热扩散特性，发现： 1 )此样机的温度场在空间分布上是均匀的； 2 )快速热扩散可以比传统扩散快3倍的速度进行扩散； 3 )在扩散温度和掺杂磷源相同的条件下，与传统扩散相比，快速热扩散将杂质向结更深的地方推进。 |
| 9. | Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高 |
